广西师范大学学报(自然科学版) ›› 2014, Vol. 32 ›› Issue (2): 55-59.

• • 上一篇    下一篇

TMAH硅湿法刻蚀剂中异丙醇与氧化剂的协同作用

陈东1,2, 刘诗斌1, 梁晋涛3   

  1. 1.西北工业大学电子信息学院,陕西西安,710072;
    2. 西安邮电大学电子工程学院,陕西西安,710121;
    3. 桂林电子科技大学环境与生命科学学院,广西桂林541004
  • 收稿日期:2013-06-30 出版日期:2014-06-25 发布日期:2018-09-25
  • 通讯作者: 陈东(1978—),男,四川南充人,西安邮电大学讲师,博士研究生。E-mail:dchen402@21cn.com
  • 基金资助:
    国家自然科学基金资助项目(60874101)

Synergistic Effect of Isopropyl Alcohol and Oxidant in Silicon Wet Etching with TMAH Etchant

CHEN Dong1,2 , LIU Shi-bin1 , LIANG Jin-tao3   

  1. 1. School of Electronics and Information, Northwestern Polytechnical University, Xi’an shaanxi 710072, China;
    2. School of Electronic Engineering, Xi’an University of Posts and Telecommunications, Xi’an shaanxi 710121, China;
    3. School of Life and Environmental Sciences, Guilin University of Electronic Technology, Guilin Guangxi 541004, China
  • Received:2013-06-30 Online:2014-06-25 Published:2018-09-25

摘要: 四甲基氢氧化铵(TMAH)是一种在微机电系统加工中常用的硅湿法刻蚀剂。在对含有铝结构表面的硅器件进行湿法刻蚀时,需要在TMAH溶液中添加一定量的硅酸和氧化剂,以保护器件表面的金属铝,但这会降低硅表面的光洁度。本文在含硅酸的TMAH溶液中同时添加过硫酸铵和异丙醇2种物质,研究其对TMAH刻蚀作用的影响。研究结果表明,2种物质的协同作用能够显著提高硅刻蚀表面的光洁度。

关键词: 四甲基氢氧化铵, 硅湿法刻蚀, 过硫酸铵, 异丙醇

Abstract: Tetramethyl ammonium hydroxide (TMAH) is a kind of silicon wet etchants frequently used in Micro-electromechanical Systems (MEMS). When etching a silicon device with aluminum structure on its surface, for protecting the aluminum structure, a quantity of silicic acid and oxidant are added into the TMAH solution, but doing so will result in the decline of surface smoothness. In this paper, two kinds of substance, isopropyl alcohol (IPA) and ammonium persulfate (AP) are simultaneously added into the TMAH solution in which silicic acid is resolved beforehand, and the effect on the etching performance of TMAH is studied. Result of the research reveals, the synergistic effect of IPA and AP can improve the smoothness of silicon etching surface remarkably.

Key words: TMAH, silicon wet etching, ammonium persulfate, isopropyl alcohol

中图分类号: 

  • TN305
[1] BISWAS K, KAL S. Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon [J]. Microelectronics Journal, 2006, 37(6): 519-525.
[2] 王涓, 孙岳明, 黄庆安, 等. 单晶硅各向异性湿法腐蚀机理的研究进展[J]. 化工时刊, 2004, 18(6):1-4.
[3] 罗元, 李向东, 付红桥, 等. MEMS工艺中TMAH湿法刻蚀的研究[J]. 半导体光电, 2003, 24(2): 127-130.
[4] 司俊杰, 马斌. 10% TMAH硅湿法腐蚀技术的研究[J]. 微细加工技术, 2004(3): 39-44.
[5] FUJITSUKA N, HAMAGUCHI K, FUNABASHI H, et al. Silicon anisotropic etching without attacking aluminum with Si and oxidizing agent dissolved in TMAH solution[J]. Sensors and Actuators A, 2004, 114(2/3): 510-515.
[6] MERLOS A, ACERO M, BAO M H, et al. TMAH/IPA anisotropic etching characteristics[J]. Sensors and Actuators A,1993, 37/38: 737-743.
[7] ZUBEL I, KRAMKOWSKA M, ROLA K. Silicon anisotropic etching in TMAH solutions containing alcohol and surfactant additives[J]. Sensors and Actuators A, 2012, 178: 126-135.
[8] PAL P, SATO K, SHIKIDA M, et al. Study of corner compensating structures and fabrication of various shapes of MEMS structures in pure and surfactant added TMAH[J]. Sensors and Actuators A, 2009, 154(2): 192-203.
[9] KRAMKOWSKA M, ZUBEL I. Silicon anisotropic etching in KOH and TMAH with modified surface tension[J]. Procedia Chemistry, 2009,1(1): 774-777.
[10] YANG Chii-rong, YANG Cheng-hao, CHEN Po-ying. Study on anisotropic silicon etching characteristics in various surfactant-added tetramethyl ammonium hydroxide water solutions[J]. J Micromech Microeng, 2005, 15(11): 2028-2037.
[11] GOSÁLVEZ M A, TANG B, PAL P, et al. Orientation- and concentration-dependent surfactant adsorption on silicon in aqueous alkaline solutions:explaining the changes in the etch rate,roughness and undercutting for MEMS applications[J]. J Micromech Microeng, 2009, 19(12): 125011.
[12] 杨宇平,王农. 几种醇溶液表面张力的测定与分析[J].广东化工,2010, 37(3): 180,215.
No related articles found!
Viewed
Full text


Abstract

Cited

  Shared   
  Discussed   
No Suggested Reading articles found!
版权所有 © 广西师范大学学报(自然科学版)编辑部
地址:广西桂林市三里店育才路15号 邮编:541004
电话:0773-5857325 E-mail: gxsdzkb@mailbox.gxnu.edu.cn
本系统由北京玛格泰克科技发展有限公司设计开发