广西师范大学学报（自然科学版） ›› 2017, Vol. 35 ›› Issue (2): 17-23.doi: 10.16088/j.issn.1001-6600.2017.02.003

• • 上一篇    下一篇

一种分段补偿带隙基准电压源的设计

王军, 韦笃取*   

  1. 广西师范大学电子工程学院,广西桂林541004
  • 出版日期:2017-07-25 发布日期:2018-07-25
  • 通讯作者: 韦笃取(1975—),男,广西贵港人,广西师范大学教授,博士。E-mail:weiduqu@gxnu.edu.cn
  • 基金资助:
    国家自然科学基金(11562004,61263021)

The Design of a Piecewise Compensated Bandgap Voltage Reference

WANG Jun, WEI Duqu*   

  1. College of Electronic Engineering, Guangxi Normal University, Guilin Guangxi 541004, China
  • Online:2017-07-25 Published:2018-07-25

PDF (PC)

208

摘要： 针对一阶温度补偿的基准电压源仍有较高的温度系数的问题,本文提出一种分段补偿的设计方法,以降低基准电压源输出电压随温度的漂移。利用带负电阻放大器的增益对温度敏感的特性产生一个随温度变化的电压信号,用该电压信号驱动一个PMOS管在3个温度段内对基准电路注入或抽取电流的方式进行分段补偿。仿真结果表明:当温度在-40~125 ℃范围内变化时,基准电压仅变化0.311 mV,温度系数为1.89×10-6 ℃-1,电源抑制比在低频时为-90 dB。该带隙基准源在温度为-15 ℃、34 ℃、76 ℃时,基准电压对温度的函数曲线的的曲率为0,在标准工艺下温漂系数较低。该研究可为ADC、线性稳压器、DC/DC转换器等电路提供高精度的基准电压。

关键词: 温度系数, 带隙基准源, 电源抑制比, 分段补偿

Abstract: For first-order temperature compensation of the reference voltage source is still high temperature coefficient, this paper proposes a design method of piecewise compensation to reduce the temperature drift. A voltage signal following the temperature variation is produced by an amplifier with negative resistance of which gain is sensitive to temperature. Drived by this voltage signal, a PMOS transistor is used to inject or extract electricity current for the reference circuit in three temperature segments as a pattern of piecewise compensation. The simulation results indicate that the reference voltage of circuit only change 0.311 mV and its temperature coefficient is 1.89×10-6 ℃-1 in the temperature range(TR) from -40 ℃ to 125 ℃. Its PSRR is -90 dB at low frequency. When the temperature of the bandgap reference voltage source is at -15 ℃, 34 ℃ and 76 ℃, the curvature of the reference voltage to the temperature is 0, and the temperature drift coefficient is lower in the standard process. The study can provide a high precision voltage reference for ADC, linear voltage regulator and DC/DC converter circuit.

Key words: temperature coefficient, bandgap reference, PSRR, piecewise compensation

中图分类号: 

  • TN432
[1] 朱晓宇,居水荣.一种应用于ADC带曲率补偿的高精度带隙基准[J].现代电子技术,2015,38(2):129-131.
[2] 蔡超波,凡东东,宋树祥,等.一款带POR的可校正低功耗电压基准源[J].广西师范大学学报(自然科学报),2016,34(1):26-31.
[3] IVAOV V,BREDERLOW R,GERBER J. An ultra low power bandgap operational at supply from 0.75 V[J]. IEEE Journal of Solid-State Circuits, 2012,47(7):1515-1523.
[4] MAGNELI L, CRUPI F, CORSONELLO P,et al. A 2.6 nW,0.45 V temperature-compensated subthreshild CMOS voltage feference[J]. IEEE Journal of Solid-State Circuits, 2011,46(2):465-474.
[5] 姜树法,张国俊.分段温度曲率补偿双极工艺带隙基准设计[J]. 微电子学与计算机,2013,30(4):76-78.
[6] 梁希,刘文平,刘智.一种高阶曲率补偿带隙基准的原理与实现[J].微电子学与计算机,2012,29(10):117-120.
[7] 毛伟,张波.一种新型指数曲率补偿带隙基准源[J].微电子学,2006,36(4):495-497.
[8] 毕查德·拉扎维.模拟CMOS集成电路设计[M].陈贵灿,程军,张瑞智,译.西安:西安交通大学出版社,2003.
[9] 凡东东,宋树祥,蒋品群,等. 新型高增益CMOS跨导运算放大器[J].广西师范大学学报(自然科学版),2014,32(4):6-9.
[10] ANDREOU C M, KOUDOUNAS S, GEORGIOU J. A novel wide-temperatrue-range 3.9 ppm/℃ CMOS bandgap reference circuit[J]. IEEE Journal of Solid-State Circuits,2012,47(2):574-581.
[11] MING Xin, MA Yingqian, ZHOU Zekun, et al. A high precision compensated CMOS bandgap voltage reference without resistors[J]. IEEE Trans Circ Syst, 2010,57(10):767-771.
[12] CHEN Jianghua, NI Xuewen, MO Bangxian. A curvature compensated CMOS bandgap voltage reference for high precision applicaitons[C]// Proceeding of the 7th Int Conf ASIC. Piscataway, NJ:IEEE Press, 2007:490-493.
[13] GE Guang, ZHANG Cheng, HOOGZAAD G, et al. A single-trim CMOS bandgap reference with a3σ inaccuracy of ±0.15% from -40℃ to 125℃[J]. IEEE Journal of Solid-State Circuits,2011, 46(11):2693-2701.
[1] 连天培, 蒋品群, 宋树祥, 蔡超波, 庞中秋. 低温度系数高电源抑制比宽频带带隙基准电压源的设计[J]. 广西师范大学学报（自然科学版）, 2019, 37(1): 125-132.
Viewed
Full text


Abstract

Cited
  Shared   
  Discussed   
No Suggested Reading articles found!
版权所有 © 广西师范大学学报（自然科学版）编辑部
地址：广西桂林市三里店育才路15号　邮编：541004
电话：0773-5857325　E-mail: gxsdzkb@mailbox.gxnu.edu.cn
本系统由北京玛格泰克科技发展有限公司设计开发