广西师范大学学报(自然科学版) ›› 2019, Vol. 37 ›› Issue (1): 125-132.doi: 10.16088/j.issn.1001-6600.2019.01.014

• 第二十四届全国信息检索学术会议专栏 • 上一篇    下一篇

低温度系数高电源抑制比宽频带带隙基准电压源的设计

连天培, 蒋品群*, 宋树祥, 蔡超波, 庞中秋   

  1. 广西师范大学电子工程学院,广西桂林541004
  • 收稿日期:2018-04-15 出版日期:2019-01-20 发布日期:2019-01-08
  • 通讯作者: 蒋品群(1970—),男,广西全州人,广西师范大学副教授,博士。E-mail:pqjiang@mailbox.gxnu.edu.cn
  • 基金资助:
    国家自然科学基金(61361011);广西高等学校优秀中青年骨干教师培养工程(GXQG022014002);广西自然科学基金(2017GXNSFAA198363)

Design of a Bandgap Reference with Low Temperature Coefficient High PSRR and Wide Band

LIAN Tianpei,JIANG Pinqun*,SONG Shuxiang,CAI Chaobo,PANG Zhongqiu   

  1. College of Electronic Engineering, Guangxi Normal University, Guilin Guangxi 541004, China
  • Received:2018-04-15 Online:2019-01-20 Published:2019-01-08

摘要: 本文设计了一款低温度系数高电源抑制比的带隙基准电压源。设计采用动态阈值MOS管(DTMOS)产生温度补偿电流,以降低温漂;输出部分采用一个简单的低通滤波器,以降低高频噪声,在较宽频带内提高电源抑制比。电路采用 SMIC 0.18 μm 标准 CMOS 工艺实现,供电电源为1.8 V,仿真结果表明:电路在-40~130 ℃温度范围内,温度系数为1.54×10-6-1,输出基准电压为1.154 V,电源抑制比在10 Hz处为-76 dB,在100 kHz处为-85 dB,在15 MHz处为-63 dB。本基准源具有较好的综合性能,可为数模转换电路、模数转换电路、电源管理芯片等提供高精度的基准电压,具有较大的应用价值。

关键词: 带隙基准电压源, 电源抑制比, 温度系数, 动态阈值MOS管

Abstract: A low temperature coefficient and high PSRR bandgap reference is presented in this paper. To temperature drift, a dynamic threshold MOS transistor is used to provide compensation current. A compact low-pass filter is introduced, the noise at high frequencies is reduced, and then a high PSRR over a wide frequency range is achieved. The proposed reference is implemented in SMIC 0.18μm CMOS process. The simulation results show that the temperature coefficient is 1.54×10-6-1, and an output reference voltage is 1.154 V for temperatures from -40 ℃ to 130 ℃ with supply voltage 1.8 V.The PSRR is -76 dB at 10 Hz, -85 dB at 100 kHz, and -63 dB at 15 MHz. The reference source has good comprehensive performance, which can provide high-precision reference voltage for digital-to-analog conversion circuit, analog-to-digital conversion circuit and power management chip, and has great application value.

Key words: bandgap reference, PSRR, temperature coefficient, dynamic threshold MOS transistor

中图分类号: 

  • TN432
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[1] 王军, 韦笃取. 一种分段补偿带隙基准电压源的设计[J]. 广西师范大学学报(自然科学版), 2017, 35(2): 17-23.
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