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广西师范大学学报(自然科学版) ›› 2016, Vol. 34 ›› Issue (1): 26-31.doi: 10.16088/j.issn.1001-6600.2016.01.004
蔡超波, 凡东东, 宋树祥, 岑明灿
CAI Chaobo, FAN Dongdong, SONG Shuxiang, CEN Mingcan
摘要: 为了解决低功耗、深亚微米工艺条件下基准源的精度问题,本文通过引入工作在亚阈值区MOS管和数字微调技术,提出一种带POR的可校正超低功耗电压基准源,并采用TSMC 90 nm COMS工艺对其进行仿真验证。仿真结果表明:该基准源总电流仅为0.876 μA,温度系数为24.4 10-6/℃,微调电压步进为25 mV。本文提出的基准源与传统基准源比,具有低温漂、可校正、低功耗等优点,适用于便携式低功耗电子产品。
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