低温度系数高电源抑制比宽频带带隙基准电压源的设计

doi:10.16088/j.issn.1001-6600.2019.01.014

Abstract

Abstract: A low temperature coefficient and high PSRR bandgap reference is presented in this paper. To temperature drift, a dynamic threshold MOS transistor is used to provide compensation current. A compact low-pass filter is introduced, the noise at high frequencies is reduced, and then a high PSRR over a wide frequency range is achieved. The proposed reference is implemented in SMIC 0.18μm CMOS process. The simulation results show that the temperature coefficient is 1.54×10^-6 ℃^-1, and an output reference voltage is 1.154 V for temperatures from -40 ℃ to 130 ℃ with supply voltage 1.8 V.The PSRR is -76 dB at 10 Hz, -85 dB at 100 kHz, and -63 dB at 15 MHz. The reference source has good comprehensive performance, which can provide high-precision reference voltage for digital-to-analog conversion circuit, analog-to-digital conversion circuit and power management chip, and has great application value.

Key words: bandgap reference, PSRR, temperature coefficient, dynamic threshold MOS transistor

CLC Number:

TN432

LIAN Tianpei,JIANG Pinqun,SONG Shuxiang,CAI Chaobo,PANG Zhongqiu. Design of a Bandgap Reference with Low Temperature Coefficient High PSRR and Wide Band[J].Journal of Guangxi Normal University(Natural Science Edition), 2019, 37(1): 125-132.

References

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Design of a Bandgap Reference with Low Temperature Coefficient High PSRR and Wide Band

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