Journal of Guangxi Normal University(Natural Science Edition) ›› 2017, Vol. 35 ›› Issue (2): 9-16.doi: 10.16088/j.issn.1001-6600.2017.02.002

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Design of a 2.8 to 8.5 GHz High Gain, Low Powerand Fully Integration UWB LNA

ZHOU Shu, JIANG Pinqun*, SONG Shuxiang   

  1. College of Electronic Engineering, Guangxi Normal University, Guilin Guangxi 541004, China
  • Online:2017-07-25 Published:2018-07-25

Abstract: In order to improve the gain of low noise amplifier without increasing power consumption, this paper presents a fully integrated high gain low power UWB low noise amplifier by introducing current reuse technology and putting the bias tube as amplifier tube. The TSMC 0.18 μm CMOS technology and Cadence software are used to carry out the pre-simulation and post-simulation of the low noise amplifier circuit. The simulation result shows that the forward gain(S21)is from 18.2 dB to 19.9 dB over the 2.8~8.5 GHz operating band, the value of noise figure(NF) ranges from 3.05 dB to 4.1 dB, the input return loss (S11) and the output return loss (S22) both are below -10 dB, the group delay ranges from 130 ps to 320 ps and the IIP3 is -12.16 dBm at 6 GHz. With a 1.5 V voltage supply, the LNA has an overall power consumption(PD)of 11.7 mW, the design target has achieved. This low noise amplifier has the characteristics of high gain and low power consumption, which can be used in receivers with higher requirements for gain and power.

Key words: high gain, low power, ultra-wide-band, LNA, current reuse

CLC Number: 

  • TN722.3
[1] CHEN Y J E, HUANG Y I. Development of integrated broad-band CMOS low-noise amplifiers[J]. IEEE Transactions on Circuits and Systems, 2007, 54(10):2120-2127. DOI:10.1109/TCSI.2007.904597.
[2] LEE J H, CHEN ChiChen, YANG HongYu, et al. A 2.5 dB NF 3.1-10.6 GHz CMOS UWB LNA with small group-delay-variation[C]//Proceeding of the 2008 IEEE Radio Frequency Integrated Circuits Symposium. Piscataway, NJ: IEEE Press, 2008: 501-504. DOI:10.1109/RFIC.2008.4561486.
[3] CHANG Y C, KAO H L, KAO C H, et al. 0.18 μm CMOS UWB LNA with new feedback configuration for optimization low noise, high gain and small area[C]// Proceeding of the 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems. Piscataway, NJ:IEEE Press,2009:194-197. DOI:10.1109/DDECS.2009.5012126.
[4] 赵飞义,张万荣,丁春宝,等. 3.1~10.6 GHz低功耗超宽带低噪声放大器[J].微电子学,2014, 44(6):737-745. DOI:10.13911/j.cnki.1004-3365.2014.06.008.
[5] LIN Yosheng, CHEN Changzhi, YANG Hongyu, et al. Analysis and design of a CMOS UWB LNA with dual-RLC-branch wideband input matching network[J]. IEEE Transactions on Microwave Theory and Techniques, 2010, 58(2):287-296. DOI:10.1109/TMTT.2009.2037863.
[6] 王巍,钟武,徐巍. 3~10 GHz平坦增益超宽带CMOS LNA设计[J].微电子学,2014, 44(1):14-18.
[7] YOUSEF K, JIA H, POKHAREL R, et al. A 0.18 μm CMOS current reuse ultra-wide-band low noise amplifier(UWB-LNA)with minimized group delay variations[C]// Proceeding of the 9th European Microwave Integrated Circuit Conference. Piscataway, NJ:IEEE Press, 2014:448-451. DOI:10.1109/EuMIC.2014.6997889.
[8] CEN Mingcan, SONG Shuxiang. A high gain, low-power low-noise amplifier for ultra-wideband wireless systems[J], Circuits System,and Signal Processing, 2014,33(10):3251-3262. DOI:10.1007/s00034-014-9801-x.
[9] PANDEY S, SINGH J. A 0.6 V, low-power and high-gain ultra-wideband low-noise amplifier withforward-body-bias technique for low-voltage operations[J]. IET Microwaves, Antennas & Propagation,2015, 9(8):728-734. DOI:10.1049/iet-map.2014.0581.
[10] SLIMANEA, TRABELSI M, BELAROUSSI M T. A 0.9 V, 7 mW UWB LNA 3.1-10.6 GHz wireless applications in 0.18 μm CMOS technology[J]. Microelectronics Journal,2011,42(11):1263-1268. DOI:10.1016/j.mejo.2011.08.008.
[11] 王春华,戴普兴,杨凯. 3.1~10.6 GHz CMOS超宽带低噪声放大器设计[J].电路与系统学报,2010,15(1):71-76.
[12] 罗文远,王春华,杜四春. 2~12 GHz CMOS超宽带低噪声放大器设计[J]. 微电子学,2010,40(2):243-247.
[13] 程远垚,宋树祥,蒋品群. 2.4 GHz CMOS低噪声放大器设计[J].广西师范大学学报(自然科学版),2016,34(3):7-13. DOI:10.16088/j.issn.1001-6600.2016.03.002.
[14] 张尚坤,宋树祥. 5.8 GHz CMOS全集成低噪声放大器设计[J].广西师范大学学报(自然科学版),2013,31(2):13-18. DOI:10.16088/j.issn.1001-6600.2013.02.002.
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