广西师范大学学报（自然科学版） ›› 2019, Vol. 37 ›› Issue (1): 125-132.doi: 10.16088/j.issn.1001-6600.2019.01.014

• 第二十四届全国信息检索学术会议专栏 • 上一篇    下一篇

低温度系数高电源抑制比宽频带带隙基准电压源的设计

连天培, 蒋品群*, 宋树祥, 蔡超波, 庞中秋   

  1. 广西师范大学电子工程学院,广西桂林541004
  • 收稿日期:2018-04-15 出版日期:2019-01-20 发布日期:2019-01-08
  • 通讯作者: 蒋品群(1970—),男,广西全州人,广西师范大学副教授,博士。E-mail:pqjiang@mailbox.gxnu.edu.cn
  • 基金资助:
    国家自然科学基金(61361011);广西高等学校优秀中青年骨干教师培养工程(GXQG022014002);广西自然科学基金(2017GXNSFAA198363)

Design of a Bandgap Reference with Low Temperature Coefficient High PSRR and Wide Band

LIAN Tianpei,JIANG Pinqun*,SONG Shuxiang,CAI Chaobo,PANG Zhongqiu   

  1. College of Electronic Engineering, Guangxi Normal University, Guilin Guangxi 541004, China
  • Received:2018-04-15 Online:2019-01-20 Published:2019-01-08

PDF (PC)

434

摘要： 本文设计了一款低温度系数高电源抑制比的带隙基准电压源。设计采用动态阈值MOS管(DTMOS)产生温度补偿电流,以降低温漂;输出部分采用一个简单的低通滤波器,以降低高频噪声,在较宽频带内提高电源抑制比。电路采用 SMIC 0.18 μm 标准 CMOS 工艺实现,供电电源为1.8 V,仿真结果表明:电路在-40~130 ℃温度范围内,温度系数为1.54×10-6 ℃-1,输出基准电压为1.154 V,电源抑制比在10 Hz处为-76 dB,在100 kHz处为-85 dB,在15 MHz处为-63 dB。本基准源具有较好的综合性能,可为数模转换电路、模数转换电路、电源管理芯片等提供高精度的基准电压,具有较大的应用价值。

关键词: 带隙基准电压源, 电源抑制比, 温度系数, 动态阈值MOS管

Abstract: A low temperature coefficient and high PSRR bandgap reference is presented in this paper. To temperature drift, a dynamic threshold MOS transistor is used to provide compensation current. A compact low-pass filter is introduced, the noise at high frequencies is reduced, and then a high PSRR over a wide frequency range is achieved. The proposed reference is implemented in SMIC 0.18μm CMOS process. The simulation results show that the temperature coefficient is 1.54×10-6 ℃-1, and an output reference voltage is 1.154 V for temperatures from -40 ℃ to 130 ℃ with supply voltage 1.8 V.The PSRR is -76 dB at 10 Hz, -85 dB at 100 kHz, and -63 dB at 15 MHz. The reference source has good comprehensive performance, which can provide high-precision reference voltage for digital-to-analog conversion circuit, analog-to-digital conversion circuit and power management chip, and has great application value.

Key words: bandgap reference, PSRR, temperature coefficient, dynamic threshold MOS transistor

中图分类号: 

  • TN432
[1] ANDREOU C M,KOUDOUNAS S,GEORGIOU J.A novel wide-temperature-range,3.9ppm/℃ CMOS bandgap reference circuit[J].IEEE Journal of Solid-State Circuits,2012,47(2):574-581.DOI:10.1109/jssc.2011.2173267.
[2] TAN Xiaoliang,CHAN Pakkwong,DASGUPTA U.A sub-1-V 65-nm MOS threshold monitoring-based voltage reference[J].IEEE Transactions on Very Large Scale Integration (VLSI) Systems,2015,23(10):2317-2321.DOI:10.1109/tvlsi.2014. 2361766.
[3] NING Ning,ZHAO Siyuan,WU Kejun,et al.A subthreshold MOSFET voltage reference based on current mirror technology under 55 nm CMOS process[J].Nanoscience and Nanotechnology Letters,2014,6(2):128-133.DOI:10.1166/ nnl.2014.1734.
[4] 王军,韦笃取.一种分段补偿带隙基准电压源的设计[J].广西师范大学学报(自然科学版),2017,35(2):17-23. DOI:10.16088/j.issn.1001-6600.2017.02.003.
[5] 张长春,吕超群,郭宇锋,等.低温度系数高电源抑制比带隙基准源的设计[J].南京邮电大学学报(自然科学版), 2013,33(2):117-121.DOI:10.14132/j.cnki.1673-5439.2013.02.009.
[6] YANG B D.250-mV supply subthreshold CMOS voltage reference using a low-voltage comparator and a charge-pump circuit[J].IEEE Transactions on Circuits and Systems II:Express Briefs,2014,61(11):850-854.DOI:10.1109/TCSII.2014. 2350354.
[7] MA B, YU Fengqi.A novel 1.2-V 4.5-ppm/°C curvature-compensated CMOS bandgap reference[J].IEEE Transactions on Circuits and Systems I:Regular Papers,2014,61(4):1026-1035.DOI:10.1109/TCSI.2013.2286032.
[8] 蔡超波,凡东东,宋树祥,等.一款带POR的可校正低功耗电压基准源[J].广西师范大学学报(自然科学版),2016,34(1): 26-31.DOI:10.16088/j.issn.1001-6600.2016.01.004.
[9] 尹勇生,易昕,邓红辉.一种带2阶温度补偿的负反馈箝位CMOS基准电压源[J].微电子学,2017,47(6):774-778. DOI:10.13911/j.cnki.1004-3365.2017.06.010.
[10] 刘俐.一种无运放高电源抑制比的带隙基准设计[J].电子与封装,2016,16(4):24-28.DOI:10.16257/j.cnki.1681-1070. 2016.0045.
[11] 吕江萍,胡巧云.一种曲率补偿的高精度带隙基准源设计[J].电子与封装,2016,16(8):34-36.DOI:10.16257/j.cnki. 1681-1070.2016.0096.
[12] ASSADERAGHI F,SINITSKY D,PARKE S, et al.A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation[C]//Proceedings of 1994 IEEE International Electron Devices Meeting.Piscataway,NJ:IEEE Press, 1994:809-812.DOI:10.1109/IEDM.1994.383301.
[13] TERAUCHI M,HAMASAKI A,SUKETA A.Selectable logarithmic/linear response active pixel sensor cell with reduced fixed-pattern-noise based on dynamic threshold MOS operation[J].Japanese Journal of Applied Physics,2005,44(4B): 2347-2350.DOI:10.1143/JJAP.44.2347.
[1] 王军, 韦笃取. 一种分段补偿带隙基准电压源的设计[J]. 广西师范大学学报（自然科学版）, 2017, 35(2): 17-23.
Viewed
Full text


Abstract

Cited
  Shared   
  Discussed   
No Suggested Reading articles found!
版权所有 © 广西师范大学学报（自然科学版）编辑部
地址：广西桂林市三里店育才路15号　邮编：541004
电话：0773-5857325　E-mail: gxsdzkb@mailbox.gxnu.edu.cn
本系统由北京玛格泰克科技发展有限公司设计开发