Journal of Guangxi Normal University(Natural Science Edition) ›› 2018, Vol. 36 ›› Issue (2): 42-49.doi: 10.16088/j.issn.1001-6600.2018.02.006
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CHENG Yang,SONG Shuxiang*,YUAN Weiqiang,LI Guiqin,PANG Zhongqiu
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| [1] LEE O, AN K H, KIM H, et al. Analysis and design of fully integrated high-power parallel-circuit class-E CMOS power amplifiers[J]. IEEE Transactions on Circuits and Systems I Regular Papers, 2010, 57(3):725-734. [2] KEE S D, AOKI I, HAJIMIRI A, et al. The class-E/F family of ZVS switching amplifiers[J]. Microwave Theory and Techniques IEEE Transactions on, 2003, 51(6):1677-1690. [3] SOKAL N O, SOKAL A D. Class E-A new class of high-efficiency tuned single-ended switching power amplifiers[J]. IEEE Journal of Solid-State Circuits, 1975, 10(3):168-176. [4] SOWLATI T, LEENAERTS D M W. A 2.4-GHz 0.18-μm CMOS self-biased cascode power amplifier[J]. Solid-State Circuits, IEEE Journal of, 2003, 38(8):1318-1324. [5] YUAN J S, YEN H D, CHEN S, et al. Experimental verification of rf stress effect on cascode class-E PA performance and reliability[J]. IEEE Transactions on Device and Materials Reliability, 2012, 12(2):369-375. [6] REYNAERT P, FRANCOIS B. Efficiency enhancement techniques for RF and MM-wave power amplifiers[M]// Efficient Sensor Interfaces, Advanced Amplifiers and Low Power RF Systems. New York:Springer International Publishing, 2016. [7] KESSLER D J, KAZIMIERCZUK M K. Power losses and efficiency of class-E power amplifier at any duty ratio[J]. IEEE Transactions on Circuits and Systems I Regular Papers, 2004, 51(9):1675-1689. [8] WANG T P, CHIANG C Y. A high-PAE high-gain 24-GHz fully integrated 0.18-μm CMOS power amplifier using micromachined inductors[C]// Electron Devices and Solid-State Circuits. Piscataway, NJ:IEEE Press, 2011:1-2. [9] KANAYA H. 5GHz-band CMOS class-E power amplifier module considering wire bonding[C]// IEEE International Symposium on Radio-Frequency Integration Technology. Piscataway, NJ:IEEE Press, 2016:157-159. [10] ZHAO C, LIU J, SHEN F, et al. Low power CMOS power amplifier design for RFID and the internet of things[J]. Computers and Electrical Engineering, 2016, 52:157-170. [11] LEE O, HAN J, AN K H, et al. A charging acceleration technique for highly efficient cascode class-E CMOS power amplifiers[J]. IEEE Journal of Solid-State Circuits, 2010, 45(10):2184-2197. [12] YAMASHITA Y, KANEMOTO D, KANAYA H, et al. A 5-GHz fully integrated CMOS class-E power amplifier using self-biasing technique with cascaded class-D drivers[C]// IEEE International Symposium on Radio-Frequency Integration Technology. Piscataway, NJ:IEEE Press, 2012:237-239. [13] MURAD S A Z, POKHAREL R K, KANAYA H, et al. A 2.4 GHz 0.18-μm CMOS class E single-ended power amplifier without spiral inductors[C]// Silicon Monolithic Integrated Circuits in Rf Systems. Piscataway, NJ:IEEE Press, 2010:25-28. [14] HUNG C C, KUO J L, LIN K Y, et al. A 22.5-dB gain, 20.1-dBm output power K-band power amplifier in 0.18-μm CMOS[C]// Radio Frequency Integrated Circuits Symposium. Piscataway, NJ:IEEE Press, 2010:557-560. |
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